Method of packaging microelectronic devices



1968 E. A. CARACCIOLO METHOD OF PACKAGING MICROELECTRONIC DEVICES 3 Sheets-Sheet 1 Original Filed Feb. 13, 1964 INVENTOR. EDWARDACARACCIOLO ATTORNEY Oct. 15, 1968 E. A. CARACCIOLO 3,405,442

METHOD OF PACKAGING MICROELECTRONIC DEVICES Original Filed Feb. 16, 1964 5 Sheets-Sheet 2 F E 154a.

S lk E D G j-54c '54L E 354d A 29- 1 5 5 4 54 e INVENTOR.

J sown/w A. CAR/ICCIOLO 2 BY F 14 10 tdw A TTOR/VEY Oct. 15, 1968 E. A. CARACCIOLO 3,405,442

METHOD OF PACKAGING MICROELECTRONIC DEVICES s Shets-Sheec 5 Original Filed Feb. 13, 1964 INVENTOR. EDWARD A. CARA CCIOLO ATTORNEY United States Patent 3,405,442 METHOD OF PACKAGING MICROELECTRONIC DEVICES Edward A. Caracciolo, Santa Clara, Calif., assignor to General Micro-Electronics Inc., a corporation of Delaware Original application Feb. 13, 1964, Ser. No. 344,741, now Patent No. 3,262,022, dated July 19, 1966. Divided and this application Feb. 18, 1966, Ser. No. 547,106

9 Claims. (Cl. 29627) ABSTRACT OF THE DISCLOSURE A method for packaging microelectronic devices includes the steps of disposing a bed of insulating material in a cavity of an insulating body provided with a conductor lead fixed therein and having an exposed Portion in the vicinity of the cavity. The bed is united with the insulating body and an electronic device is placed in the bed and embedded therein. A mask is then placed in contact with the bed and the insulating body, which mask has an interconnecting conductor lead array pattern extending between the exposed portion of the lead and the electronic device. Electrically conductive material is deposited within the conductor lead array pattern to form a conductor lead array between the exposed portion of the lead and the electronic device. The mask is then removed to leave the above described array adherent to the exposed portion of the lead and the electronic device thereby establishing an electrical connection therebetween.

The present invention relates to a method of and prodnet for packaging semiconductive and microelectronic devices, and this disclosure is a division of application Ser. No. 344,741, filed Feb. 13, 1964, now US. Patent No. 3,262,022, issued July 19, 1966.

It is common practice to package a semiconductive device in a header having a plurality of leads sealed within a glass seal. Wire is generally bonded to each terminal of the semiconductive device by a metallic bail. The other end of each wire is bonded to a lead of the header. Thus, in establishing an electrical connection between a terminal of the semiconductive device and a lead of the header, two bonding operations are generally employed.

An object of the present invention is to provide an improved method for the packaging of semiconductive and microelectronic devices.

Another object of the present invention is to provide an improved product for the packaging of semiconductive o and microelectronic devices.

Another object of the present invention is to provide a more economical method for packaging semiconductive and microelectronic devices without sacrificing reliability or usability.

Another object of the present invention is to provide a method for the packaging of semiconductive and microelectronic devices that minimizes the likelihood of mechanical damage to the packaged device and that also lessenS the tendency of mechanical failure within the packaged device.

Another object of the present invention is to provide a method for the packaging of semiconductive devices in which one or more mechanical bonding operations, such as welding or soldering, for the establishment of electrical connections between the terminals of the semiconductive device and the leads of the package is obviated.

Another object of the present invention is to provide a packaged semiconductive device in which connections from the terminals of the semiconductive device to the leads of the package are made without resorting to welding, soldering or other mechanical bonding.

3,405,442 Patented Oct. 15, 1968 Another object of the present invention is to provide a method for packaging a plurality of semiconductive devices.

Another object of the present invention is to provide a method for packaging one or more semiconductive devices wherein the interconnections between the package leads and the terminals of the semiconductive devices are produced simultaneously.

I Other and further objects and advantages of the present invention will be apparent to one skilled in the art from the following description taken in conjunction with the accompanying drawings, in which:

FIG. 1 is a perspective view of a semiconductive device embedded within a low temperature melting glass, which in turn is fused to a high temperature melting glass seal that is contained within a header.

FIG. 2 is a vertical sectional view taken along line 22 of FIG. 1.

FIG. 3 is a plan view taken along line 33 of FIG. 2..

FIG. 4 is a diagrammatic sketch of a platen above the assembly shown in FIG. 3 before the semiconductive device is embedded within the low temperature melting glass.

FIG. 5 is a plan view of the assembly shown in FIG. 3 with a thin metal foil mask thereon having an interconnecting conduct lead pattern formed therein.

FIG. 6 is a schematic diagram of a vacuum evaporator for depositing metal to form the interconnecting conductor lead array.

FIG. 7 is a schematic diagram of an alternate arrangement for depositing metal to form the interconnecting conductor lead array.

FIG. 8 is a plan view of the assembly shown in FIG. 4 with the metal mask removed and with the formed interconnecting conductor lead array.

FIG. 9 is a perspective view of the semiconductive device embedded within sealing glass contained by the header and having the terminal leads thereof connected to the header leads by the interconnecting conductor lead array.

FIG. 10 is a perspective view of the assembly shown in FIG. 8 with a hermetically sealed cap thereon.

FIG. 11 is a plan view of metal conducting leads sandwiched between insulating bodies with the upper insulating body having a cavity formed therein.

FIG. 12 is a vertical sectional view taken along line 12-12 of FIG. 11 with a semiconductive device seated on the floor of the cavity.

FIG. 13 is a plan view of the assembly shown in FIGS. 11 and 12 with a thin metal foil mask having an interconnecting conductor lead array pattern formed therein.

FIG. 14 is a plan view of the assembly shown in FIG. 13 with the metal mask removed and the formed interconnecting conductor lead array.

FIG. 15 is a perspective view of the semiconductive device embedded within the cavity of the sealing glass and with the terminal leads thereof connected to the package leads by the interconnecting conductor lead array.

FIG. 16 is a perspective view of the preformed interconnecting conductor metal strip for a plurality of semiconductive devices.

FIG. 17 is a perspective view of the metal strip of FIG. 16 embedded within an insulating glass strip.

FIG. 17A is an enlarged vertical sectional view taken along line 17A-17A of FIG. 17.

FIG. 18 is a perspective view of the assembly prepared for evaporating the interconnecting conductor lead array.

FIG. 18A is a vertical sectional view taken along line 18A18A of FIG. 18.

FIG. 19 is an exploded view of a die-embedment assembly.

FIG. 20 is a cross-sectional view of the die-embedment assembly of FIG. 19 in conjunction with the assembly of FIG. 18.

FIG. 21 is a perspective of the assembly with the interconnecting conductor lead array.

FIG. 22 is a perspective view of the semiconductive devices packaged.

Illustrated in FIGS. 1 and 2 is a suitable header or housing 10, which has a generally cylindrical configuration. The header or housing 10 is made from suitable material, such as gold-plated Kovar. Contained within the housing 10 is a relatively high temperature melting glass 11, such as hard borosilicate, which forms a matched glass-to-metal seal or insulating body with the cylindrical housing 11. Fixedly secured or embedded Within the high temperature melting sealing glass 11 is a plurality of leads 12, such as eight, which extend to even height with the upper surface of the glass 11 and the housing 10, and which project below the lower surface of the sealing glass 11 and the cylindrical housing 10. The leads 12 are made from suitable material, such as gold-plated Kovar.

Formed in the high temperature melting glass 11 is a crater or cavity 15, which is axially disposed relative to the axis of the cylindrical housing 10. The cavity 15 may be formed in any well-known manner, such as by photoresist masking, or by the application of a suitably perforated etch-resistant tape, such as Mylar, which may be applied to the upper surface of the sealing glass 11. The pattern of the masking tape applied to the upper surface of the sealing glass 11 is such as to permit the formation of the cavity 15 in the glass 11. After the masking tape is applied, the assembly is immersed in a suitable glass etchant solution, such as 49% solution of hydrofluoric acid, for a suitable period of time, such as ten minutes.

After the cavity 15 is formed in the high temperature melting glass 11, a bed of relatively low temperature melting glass 16 is disposed within the cavity 15. The low temperature melting glass powder 16 is made of suitable material, such as commonly employed low melting lead glass. In low temperature package applications, thermosetting plastics may be used in lieu of the glass embedment material 16.

At this time, heat is applied to the low temperature melting glass powder 16, whereby the low temperature melting glass 16 fuses into the high temperature melting glass 11 forming a homogenous glass mass. A semiconductive device 20, which is produced independently of the forming of the package units in a well-known and conventional manner, is placed onto the molten glass bed 16. Thereupon, a sheet of suitable release material, such as a mica sheet 19 (FIG. 4), is attached to the lowermost surface of a suitable thermally controlled platen 21 (FIG. 4) above the upper surface of the semiconductive device 20, the upper surface of the bed 16 and the upper surface of the glass body 11.

Now, the platen 21 is lowered to cause heat-pressure contact between the mica sheet 19 and the just-mentioned upper surfaces. As a consequence thereof, the semiconductive device 20 is pressed into the molten glass bed 16 until the upper surface of the semiconductive device 20 is planar with the upper surface of the leads 12, the upper surface of the high temperature melting glass 11, and the upper surface of the low temperature melting glass bed 16. (See FIG. 2.) After the foregoing is completed, the mica sheet 19 when cooled is removed or peeled away from the assembly.

Thereupon, a thin metal foil mak 25 (FIG. such as; a magnetic steel mask, is placed on the upper planar surfaces of the glass 11, glass 16, semiconductive device 20 and leads 12. The metal foil mask 25 has preformed therein openings conforming to the configuration of an interconnecting conductor lead array. For indexing the metal foil mask 25, a tab 26 (FIG. 5) thereon is disposed in overlying relation with a tongue 27 (FIG. 3) on the housing so that the edges thereof are coincident. In addition, template projections 28 in the metal foil mask 25 are received by corresponding recesses in the glass 11.

As a consequence thereof, the radial openings of the metal foil mask are arranged to extend from the package leads 12 to the terminals of the semiconductive device 20.

Subsequently, the assembly shown in FIG. 5 is placed in a suitable vacuum evaporator 30 (FIG. 6), which comprises a vacuum chamber 31, a clad metal dome 32, a R.F. heating coil 33, magnetic template base 34, and a conductor metal, such as aluminum, which is clad over molybdenum or other suitable susceptor material. By employing the domed evaporating fixture 32, which is of a parabolic configuration, the metal is deposited on the upper layer of the assembly disposed within the vacuum evaporator 30 in a thin, smooth, even layer. As a result thereof, there is deposited a coherent layer of metal over any microscopic step, ridge or other defect in the surface, since the metal vapor will strike any point on the target surface by virtue of the omni-directional particle trajectory.

Alternately, a high resistance wound dome 32a (FIG. 7) may be employed in lieu of the clad metal dome 32 and the RF. heating coils. Attached to high resistance wire 35 of the dome 32a is the metal to be deposited, such as aluminum.

After the even layer of metal is deposited through the thin metal foil mask 25, the assembly is removed from the vacuum evaporator 30 and the metal foil mask 25 is removed or lifted from the assembly. As a consequence thereof, an interconnecting conductor lead array (FIGS. 8 and 9) of suitable conducting metal is formed, which includes radial conductor leads 4041-4011. The radial conductor leads 40a-40h adhere to the upper ends of the header leads 12, respectively (FIGS. 8 and 9) and adhere to the terminals of the semiconductive device 20. Thus, electrical connections are established from the terminals of the semiconductive device 20 to the leads 12 of the housing 10 without any mechanical bonding, such as welding or soldering.

It may be desired to coat the entire planar surface of the assembly with conducting material and remove by photo-resist or photo-etching techniques the portions of the coated surface not serving as the interconnecting conductor lead array.

Optionally, a thin dielectric film, such as magnesium fluoride, may be deposited to the surface of the previously described assembly by conventional means, such as vacuum exaporation. A cap 42 (FIG. 10) may be secured to the housing 10.

As shown in FIGS. 9 and 10, the packaged semiconductive device of the present invention comprises the cylindrical housing 10. Contained within the cylindrical housing 10 is the high temperature melting glass 11, The housing leads 12 are secured within the housing 10 by the glass 11 and have the lower extremities thereof project below the housing 10. At the upper extremities thereof, the leads 12 are at even height with the upper surface of the sealing glass 11.

Formed in the sealing glass 11 coincident with the cylindrical axis of the housing 10 is the cavity 15, which is filled with the bed of the low temperature melting glass 16 and the embedded semiconductive device 20. The upper surface of the housing 10, the upper surface of the leads 12, the upper surface of the glass 11, the upper surface of the glass 16, the upper surface of the semiconductive device 20 are planar and at even height.

Embedded within the upper surface of the glass 11 and the glass 16 is the conductor lead array 40 which is disposed in sealed engagement therewith for adhering contact with the upper ends of the leads 12 and the terminals of the semiconductive device 20. The interconnecting conductor lead array 40 overlies in contact relation the upper ends of the leads 12 and the terminals of the semiconductive device 20 for establishing electrical interconnections between the terminals of the semiconductive device 20 and the header leads 12.

Illustrated in FIGS. 11 and 12 is a unitary structure comprising an insulating base 51 of suitable high temperature melting glass, such as hard borosilicate. In the preferred embodiment, the base 51 has a rectangular configuration with a flat, planar upper surface. Disposed above the base 51 is an upper insulating member 52 of suitable high temperature melting glass, such as hard borosilicate. The upper insulating member 52 has a rectangular configuration and has a rectangular crater or cavity 53 formed therein with a pianar bottom wall.

Embedded and sealed between the dielectric base 51 and the dielectric member 52 are parallel package conductor leads 54a-54j, which form a package conductor lead array 54 and are made of suitable metal conducting material, such as Kovar. The conductor leads 54a54e are parallel and project outwardly from the unitary structure 50 and inwardly into the cavity 53. Likewise, the conductor leads 54f-54j are parallel and project outwardly from the unitary structure 50 and inwardly into the cavity 53 so as to be in spaced transverse alignment with the package conductor leads 54a54e. The cavity 53 in the dielectric member 52 provides access to the confronting ends of the package conductor leads 54a-54j.

In forming the sealed unitary structure 50 of FIG. 11, a strip of conducting material, such as Kovar or other metal, is performed with a plurality of laterally extending parallel conductor leads. The strip of conducting material is embedded between an upper and lower insulating or dielectric strip of high temperature melting material, such as hard borosilicate with the insulating strip centrally located intermediate the sides of the metal conducting strip. The assembly is fired in a furnace for a suitable time, such as seven minutes, and at a suitable temperature of 1650 F. Thereupon, the assembly is removed from the furnace and annealed in a suitable manner, such as for a period of fifteen minutes at 950 F. Upon cooling, the unitary structure 50 as formed comprises a strip of conductor material sandwiched or embedded between the strips of insulating glass material.

The cavity 53 or crater is formed in the upper insulating strip 52 by photomasking or by masking the upper insulating strip 52 with an etch-resistant material, such as suitably perforated Mylar. The mask is formed so that the rectangular cavity 53 with a planar bottom wall is created in the upper insulating strip 52 to expose the conductor leads of the metal conductor strip 54. Thereupon, a solution of hydrofluoric acid is applied to the upper insulating strip 52 which selectively removes the glass, but does not attack the metal conductor strip 54.

After the cavity 53 is formed in the high temperature melting glass 52, a bed of relatively low temperature melting glass 55 is disposed within the cavity 53. The low temperature melting glass powder 55 is made of suitable material, such as commonly employed low melting lead glass. In low temperature package applications, thermosetting plastics may be used in lieu of the glass embedment material 55.

At this time, heat is applied to the low temperature melting glass powder 55, whereby the low temperature melting glass 55 fuses into the high temperature melting glass 51 forming a homogenous glass mass. A semiconductive device 60, which is produced independently of the forming of the package units in a well-known and conventional manner, is placed onto the molten glass bed 55. Thereupon, a sheet of suitable release material, such as the mica sheet 19 of FIG. 4, is attached to the lowermost surface of a suitable thermally controlled platen, such as the platen 21 of FIG. 4. The mica sheet will fit between the upstanding flanges of the insulating body 52 and is positioned above the upper surface of the semiconductive device 60, the upper surface of the bed 55 and the upper surface of the glass body 51.

Now, the platen is lowered to cause heat-pressure contact between the mica sheet and the referred-to upper surfaces. As a consequence thereof, the semiconductive device 60 is pressed into the molten glass bed 55 and the upper surface of the semiconductive device 60 is planar with the package leads 54, the upper surface of the insulating body 51, and the upper surface of the low temperature melting glass bed 55. (See FIG. 12). After the foregoing is completed and after the mica sheet has cooled, the mica sheet is removed or peeled away from the assembly.

At this time, a thin metal foil mask 61 (FIG. 13), such as a magnetic steel mask, is placed on the upper planar surfaces of the ends of the package conductor leads 5411-541", the glass 55, the insulating body 51 and the semiconductive device 60 between the upstanding flanges of the dielectric member 52. The metal foil mask 61 has preformed therein openings conforming to the configurations of an interconnecting conductor lead array.

Subsequently, the assembly shown in FIG. 13 is placed in a suitable vacuum evaporator, such as vacuum evaporator 30 of FIG. 6. As a result thereof, there is deposited a coherent layer of metal, such as aluminum, on the ex- :posed surfaces through the metal foil mask 61.

After the even layer of metal is deposited on the exposed surfaces through the thin metal foil mask 61, the assembly is removed from the vacuum evaporator and the metal foil mask 61 is removed or lifted from the assembly. As a consequence thereof, an interconnecting conductor lead array 62 (FIG. 14) of suitable conducting metal is formed. The conductor leads of the interconnecting conductor lead array 62 adhere to the upper surfaces of the package conductor leads in the cavity 53 and adhere to the terminals of the semiconductive device 60. Thus, electrical connections are established from the terminals of the semiconductive device 60 to the package conductor leads Eda-5 H without any mechanical bonding, such as welding or soldering.

After the foregoing is completed, the assembly of FIG. 14 is hermetically sealed. For this purpose, a metal cap 65 (FIG. 15) of suitable material, such as Kovar, is employed, which is glazed on the lower surface thereof with a low temperature melting glass or a solder glass. The cap 65 is aligned to fit over the cavity 53 in an inert atmosphere. A thermally controlled platen, not shown, is lowered onto the glazed metal cap 65 melting the glass surface thereof to seal the package, thereby hermetically sealing the semiconductive device 60 within the package.

As shown in FIGS. 14 and 15, the packaged semiconductive device of the present invention comprises a lower, flat, rectangularly-shaped insulating member 52. The upper insulating member 52 forms a rectangular crater 53 with a flanged periphery or rim. Disposed in sealed, embedded relation between the insulating base 51 and the insulating member 52 is the package conductor lead array 54 with parallel series of conductor leads projecting out of the package.

Seated on the upper surface of the insulating base 51 is a fused bed of the low temperature melting glass 55 and embedded within the glass 55 is the semiconductive device 60. Interconnecting in fixed relation the terminals of the semiconductive device 60 and the package conductor leads S M-541' is the interconnecting conductor lead array 62. The interconnecting conductor lead array 62 adheres to and is disposed above the semiconductive 60 and the package conductor leads 54a54j for establishing electrical connections therebetween. The cap 65 is disposed in bonded relation in the cavity 53 to hermetically seal the package.

Illustrated in FIG. 16 is a preformed rrnetal strip 70 made of suitable material, such as Kovar or Therio. The preformed metal strip comprises a base 70a. Formed in the base 70a are juxtaposed groups of package conductor leads 71 and 72. The groups of package conductor leads 71 and 72 extend longitudinally. Each group of package conductor leads includes a series of transversely disposed, parallel package conductor leads. For example, group 71 includes series 71a and 7111. At the confronting ends thereof for each group, the package conductor leads are crimped or bent upwardly, such as at 71c and 71d for group 71, and the remaining portions thereof are horizontal.

The metal strip 70 is cleaned for disposition between an upper insulating or dielectric strip 75 and a lower insulating or dielectric strip 76 (FIG. 17). It is to be observed that the width of the insulating strips 75 and 76 is less than the width of a group of package conductor leads, such as group 71. In addition, the insulating strips 75 and 76 are centrally located relative to the free edges of each group of package conductor leads, whereby the free ends of the package conductor leads project outwardly from the sides of the dielectric strips 75 and 76. In the preferred embodiment, the dielectric strips 75 and 76 are made from hard borosilicate, which is a relatively high temperature melting glass.

The metal strip 70 is disposed between the insulating strips 75 and 76 and is retained in a firing jig assembly, not shown, for advancement through a furnace, for example, twenty minutes at a furnace temperature, for example, 925 C. As a consequenie thereof, the metal strip 70 is sandwirhed and embedded between the insulating strips 75 and 76 to form a sealed, unitary structure. The sealed, unitary structure of the conducting strip 70 sandwiched between the insulating strips 75 and 76 is removed from the furnace and advanced through an annealing and cooling chamber until cooled to room temperature.

Upon completion of the formation of the sealed, unitary structure, the upper surface thereof is lapped to form a fiat, planar surface with the junction of the crimped ends of the package lead conductors removed (FIGS. 17 and 17A). As a consequence thereof, each side of the unitary structure now has a separate set of parallel, transversely disposed package conductor leads.

After the foregoing has been carried out, photo-resist material or an etch-resist perforated masking tape is applied to the lapped surface of the sealed, unitary structure. In the preferred embodiment, the masking tape is made of solvent resistant material, such as tape #853 produced by Minnesota Mining and Mineral Corporation or Mylar. The pattern of the masking tape applied to the lapped surface is such as to permit the formation of a channel or recess 89 (FIG. 18A) in the lapped surface of the sealed, unitary structure.

After the acid-resist masking tape is applied to the lapped surface of the sealed, unitary structure, a suitable glass etchant solution is applied to the masked and exposed surface, whereby the channel 80 is formed in the lapped surface along the entire longitudinal dimension thereof. The depth of the channel 80 is sufficient to permit a recess below the confronting crimped ends of the package conductor leads (FIG. 18A). In the preferred embodiment, the etchant solution is a 49% solution of hydrofluoric acid and the etch application time is ten minutes.

The channel 80 is now filled with a relatively low temperature melting glass powder 81, such as low melting lead glass or in lieu thereof suitable thermosetting plastics.

At this time, heat is applied to the low temperature melting glass powder 81, whereby the low temperature melting glass powder 81 fuses into the high temperature melting glass 75 forming a homogeneous bed or layer. To be disposed Within the low temperature molten glass bed 81 in longitudinally spaced relation are a plurality of semiconductive devices 82, 83 and 84.

In lieu of a thermally controlled platen, a heater block 90 (FIGS. 19 and 20) is employed. At each corner of the block 90 are alignment or indexing posts 90a-90d. Seated on the heater block 90 is a die registering sheet 91, which in the preferred embodiment is a transparent mica sheet. Formed on a surface of the mica sheet 91 are evaporated metal interconnecting conductor lead array patterns conforming in location and configuration to the desired interconnecting conductor leads. This may be accomplished through the vacuum evaporator previously described. The mica sheet 91 includes apertures 91a-91d to receive the posts 90a-90d of the heater block 90 for alignment and indexing. A volatilizable adhesive, such as biphenyl, is applied to the mica sheet 91 to retain the same in its precisely aligned position on the heater block 90.

The mica sheet 91 is placed on the heater block 90 so that the interconnecting conductor lead array pattern is facing away from the heater block 90. Thereupon, the as sembly shown in FIG. 18 is placed on the mica sheet 91 with the semiconductive devices 82-84 precisely located with respect tot he conductor lead array pattern of the mica sheet 91 and with the glass bed 81 engaging the mica sheet 91. A suitable weight, not shown, is applied to the assembly for heat-pressure contact to embed the semiconductive devices 82-84 into the heat softened bed of the glass 81. As a consequence thereof, the semiconductive devices 82-84 are embedded in the glass channel bed 81 with the upper surfaces thereof planar with the upper surface of the bed 81, the crimped ends 716 and 71d of the package lead conductors 71a and 71b, respectively, and the upper surface of the dielectric strip 75. (See FIGS. 18 and 18A.) After the just described assembly is removed from the heater block 90 and cooled, the mica sheet 91 is peeled away leaving a planar, mirror-smooth, heterogeneous surface as the upper surface of the assembly with the impression of the conductor lead array patterns.

Thereupon, a thin metal foil mask, not shown, but similar to mask 25, and made of suitable material, such as magnetic steel, is placed on the upper planar surface of the assembly. The metal foil mask, which is similar to mask 25, has preformed therein openings conforming to the configuration of an interconnecting conductor lead array and registrable with the conductor lead array patterns impression remaining after the mica sheet 91 is removed.

Subsequently, the assembly shown in FIG. 18 with the metal foil mask thereon is placed in a suitable vacuum evaporator, such as vacuum evaporator 30 of FIG. 6. As a result thereof, there is deposited a coherent layer of metal, such as aluminum, on the exposed surfaces through the foil mask.

After the even layer of metal is deposited on the exposed surfaces through the thin metal foil mask, the assembly is removed from the vacuum evaporator and the metal foil mask is removed or lifted from the assembly. As a consequence thereof, an interconnecting conductor lead array 96 (FIG. 21) of suitable conducting metal, such as aluminum is formed. The conductor leads of the interconnecting conductor lead array 96 adhere to the upper surfaces of the package conductor leads 71a and 71b and adhere to the terminals of the semiconductive devices 82-84. Thus, electrical connections are established from the terminals of the semiconductive device 82 to the package conductor leads 71a and 71b, and, also, to select terminals on the semiconductive 83 without any mechanical bonding, such as welding or soldering.

After the foregoing is completed, the assembly of FIG. 21 is hermetically sealed. For this purpose, a metal cap 97. (FIG. 22) of suitable material, such as Kovar, is employed, which is glazed on the lower surface thereof with a low temperature melting glass or a solder glass. The cap 97 is aligned to fit over the assembly of FIG. 21 in an inert atmosphere. A thermally controlled platen, not shown, is lowered onto the glazed metal cap 97 melting the glass surface thereof to seal the package, thereby hermetically sealing the semiconductive devices 82-84 within the package.

As shown in FIGS. 21 and 22, the packaged semiconductive devices 82-84 of the present invention comprises a lower flat rectangularly shaped insulating base and an upper insulating member 76. Disposed in sealed, embedded relation between the insulating base 75 and the insulating member 76 are the package lead conductors 71a and 71b with crimped confronting ends 710 and 71d, respectively. The package conductor leads 71a and 711; project laterally out of the package.

Seated on the upper surface of the insulating base 75 is a fused bed of the low temperature melting glass 81 and embedded within the glass 81 are the semiconductive devices 82-84. Interconnecting successive semiconductive devices and also interconnecting terminals of the semiconductive devices and the package conductor leads is the interconnecting conductor lead array 96. The cap 97 is disposed in bonded relation with the insulating member 76.

While reference is made to insulating glass, it is apparent that plastics, other organic structural material, and certain epoxies may be employed where suitable in the application thereof. Although reference is made to different melting temperatures for the insulating material, it is within the contemplation of the present invention that different setting characteristics may be employed. The use of different plastics may provide the different setting characteristics.

It is to be understood that modifications and variations of the embodiment of the invention disclosed herein may be resorted to without departing from the spirit of the invention and the scope of the appended claims.

Having thus described my invention, what I claim as new and desire to protect by Letters Patent is:

1. A method of packaging an electronic device comprising the steps of, disposing a bed of insulating material in a cavity of an insulating body, said insulating body having conductor leads fixed therein with exposed portions in the vicinity of said cavity, uniting said bed with said insulating body, placing an electronic device in said bed, placing a sheet of releasable material confronting a surface of said bed and a surface of said electronic device, applying pressure to 'said sheet of releasable material for embedding said electronic device in said bed with a surface of said electronic device forming a planar surface with the surface of said bed, removing said sheet of releasable material from contact with said electronic device and said bed, placing a mask in contact with said planar surface and a surface of said insulating body surrounding said cavity, said mask having an interconnecting conductor lead array pattern extending between said exposed portions of said leads and said electronic device, depositing conductor metal within the conductor lead array pattern of said mask to form a conductor lead array between said exposed portions of said leads and said electronic device, and removing said mask to leave the conductor lead array adhering to said exposed portions of said leads and said electronic device for establishing electrical connections therebetween.

2. A method of packaging an electronic device comprising the steps of, disposing a bed of insulating material in a cavity of an insulating body, said insulating body having conductor leads fixed therein with exposed portions in the vicinity of said cavity, said bed of insulating material having a melting temperature less than the melting temperature of said insulating body, fusing said bed to said insulating body with a surface of said bed planar with a surface of said insulating body surrounding said cavity, placing an electronic device in said bed, placing a sheet of releasable material in confronting relation to a surface of said electronic device, the surface of said bed and the surface of said insulating body surrounding said cavity, applying heat to said sheet of releasable material for embedding said electronic device in said bed until a surface of said electronic device forms a planar surface with the surface of said bed and the surface of said insulating body surrounding said cavity, removing said sheet or releasable material from contact with said planar surface, placing a mask in contact with said planar surface, said mask having an interconnecting conductor lead array pattern extending between said exposed portions of said leads and said electronic device, depositing conductor metal within the conductor lead array pattern of said mask to form a conductor lead array between said exposed portions of said leads and said electronic device, and removing said mask to leave the conductor lead array adhering to said exposed portions of said leads and said electronic device for establishing electrical connections therebetween.

3. A method of packaging an electronic device comprising the steps of, disposing a bed of insulating material in a cavity of an insulating body, said insulating body having conductor leads fixed therein with exposed portions in the vicinity of said cavity and planar with a surface of said insulating body surrounding said cavity, said bed of insulating material having a melting temperature less than the melting temperature of said insulating body, fusing said bed to said insulating body with a surface of said bed planar with the surface of said insulating body surrounding said cavity and with the exposed portions of said leads, placing an electronic device in said bed, placing a sheet of releasable material in confronting relation to the surface of said electronic device, the surface of said bed, the exposed portions of said leads and the surface of said insulating body surrounding said cavity, applying heat-pressure to said sheet of releasable material for embedding said electronic device in said bed until a surface of said electronic device forms a planar surface with the surface of said bed, the exposed portions of said leads and the surface of said insulating body surrounding said cavity, removing said sheet of releasable material from contact with said planar surface, placing a mask in contact with said planar surface, said mask having an interconnecting conductor lead array pattern extending between said exposed portions of said leads and said electronic device, depositing conductor metal within the conductor lead array pattern of said mask to form a conductor lead array between said exposed portions of said leads and said electronic device, and removing said mask to leave the conductor lead array adhering to said exposed portions of said leads and said electronic device for establishing electrical connections therebetween.

4. A method of packaging an electronic device comprising the steps of, disposing a bed of insulating material in a cavity of an insulating body, said insulating body having conductor leads fixed therein with exposed portions in the vicinity of said cavity and planar with a surface of said insulating body surrounding said cavity, said bed of insulating material having a melting temperature less than the melting temperature of said insulating body, fusing said bed to said insulating body with the surface of said bed planar with a surface of said insulating body surrounding said cavity and with the exposed portions of said leads, placing an electronic device in said bed, placing a sheet of mica in confronting relation to the surface of said electronic device, the surface of said bed, the exposed portions of said leads and the surface of said insulating body surrounding said cavity, applying heat-pressure to said sheet of mica for embedding said electronic devices in said bed until a surface of said electronic device for-ms a planar surface with the surface of said bed, the exposed portions of said leads and the surface of said insulating body surrounding said cavity, removing said sheet of mica from contact with said planar surface, placing a mask in contact with said planar surface, said mask having an interconnecting conductor lead array pattern extending between said exposed portions of said leads and said electronic device, depositing conductor metal within the conductor lead array pattern of said mask to form a conductor lead array between said exposed portions of said leads and said electronic device, and removing said mask to leave the conductor lead array adhering to said exposed portions of said leads and said electronic device for establishing electrical connections therebetween.

5. A method of packaging an electronic device comprising the steps of, disposing a bed of insulating material in a recess of an insulating body, said insulating body having conductor leads fixed therein with exposed portions in the vicinity of said recess, said bed of insulating material having a melting temperature less than the melting temperature of said insulating body, fusing said bed to said insulating body, placing an electronic device for embedment within said bed, placing a sheet of releasable material in contact with said bed, said electronic device and said insulating body, said sheet of releasable material being formed with a metal conductor lead array pattern confronting said bed and said insulating body, said conductor lead array pattern being arranged to extend betwen the exposed portions of said leads and said electronic device, applying heat-pressure to said sheet of releasable material for embedding said electronic device in said bed and for forming a conductor lead array pattern impression, removing said sheet of releasable material from contact with said electronic device and said bed, placing a mask in contact with said electronic device, said bed and said body of insulating material, said mask having an interconnecting conductor lead array pattern formed therein registrable with said conductor lead array pattern impression, depositing conductor metal within the conductor lead array pattern of said mask to form an interconnecting conductor lead array between said electronic device and between said exposed portions of said leads, and removing said mask to leave the conductor lead array adhering to said electronic device and said exposed portions of said leads.

6. A method of packaging electronic devices comprising the steps of, disposing a bed of insulating material in a recess of an insulating body, said insulating body having conductor leads fixed therein with exposed portions in the vicinity of said recess, said bed of insulating material having a melting temperature less than the melting temperature of said insulating body, fusing said bed to said insulating body, placing a plurality of spaced electronic devices for embedment within said bed, placing a sheet of releasable material in contact with said bed, said electronic devices and said insulating body, said sheet of releasable material being formed with a metal conductor lead array pattern confronting said bed and said insulating body, said conductor lead array pattern being arranged to extend between spaced electronic devices and between said exposed portions of said leads and said electronic devices, applying heat-pressure to said sheet of releasable material for embedding said electronic devices in said bed and for forming a conductor lead array pattern impression, removing said sheet of releasable material from contact with said electronic devices and said bed, placing a mask in contact with said electronic devices, said bed and said body of insulating material, said mask having an interconnecting conductor lead array pattern formed therein registrable with said conductor lead arraypattern impression, depositing conductor metal within the conductor lead array pattern of said mask to form a conductor lead array between said electronic devices and between said exposed portions of said leads and said electronic devices, and removing said mask to leave the conductors lead array adhering to said electronic devices and said exposed portions of said leads.

7. A method of packaging an electronic device comprising the steps of, disposing a bed of insulating material in a cavity formed in a substantially planar region of an insulating body, said insulating body having a conductor lead afiixed therein and including an exposed portion at the surface of said planar region, in the vicinity of said cavity, uniting said bed with said insulating body, placing an electronic device having a substantially planar region in said bed, embedding said electronic device in said bed so that said planar regions of said body and said device and the exposed region of said bed are substantially coplanar, and depositing conductor metal on said planar regions for the formation of a conductor lead array between said exposed portion of said lead and said electronic device, thereby to establish an electrical connection therebetween.

8. The method according to claim 7 wherein said conductor lead array is laid down by placing a mask in contact with said coplanar regions of said bed and said insulating body, said mask having an interconnecting conductor lead array pattern extending between said exposed portion of said lead and said electronic device, depositing a conductive metal within the conductor lead array pattern to form a conductor lead array between said exposed portion of said lead and said electronic device, and removing said mask to leave the conductor lead array adhering to said exposed portion of said lead and said electronic device for establishing an electrical connection therebetween.

9. The method according to claim 8 wherein said bed of insulating material has a melting temperature less than the melting temperature of said insulating body and further characterized in that said bed is fused to said insulating body.

References Cited UNITED STATES PATENTS 2,720,617 10/ 1955 Sardella. 3,134,930 5/1964 Wright. 3,206,647 9/1965 Kahn l74-52 X 2,890,395 6/1959 Lathrop et al. 29-591 X WILLIAM I. BROOKS, Primary Examiner. 

